The global SiC diodes market was valued at approximately US$ 337 Mn in 2018, and is expected to witness a high growth rate during the forecast period owing to increasing military expenditure. During the period of assessment, 2018-2028, the SiC diodes market is projected to expand at a CAGR of approximately 9%. It has been observed that 600V/650 V is among the attractive reverse voltage segments of the SiC diodes market.
The demand for silicon carbide diodes is increasing rapidly in various application areas, such as automotive, aerospace, and data centers, which is a major factor driving the SiC diodes market. However, Communication will remain an attractive application area for manufacturers of SiC diodes in the market. Moreover, growing demand of SiC diodes due to their high-temperature capabilities is among the crucial factors driving the SiC diodes market.
East Asia was a prominent regional market for SiC diodes in 2018. Increasing demand for electric and hybrid vehicles is expected to generate substantial demand for SiC diodes in the region. On the other hand, South Asia holds high growth potential for the SiC diodes market and the soaring demand for high-power compound semiconductors will remain a major factor contributing to the growth of the SiC diodes market in South Asia.
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- Infineon Technologies
- ROHM Semiconductors
- Cree, Inc.
- Microchip Technology Inc.
- ON Semiconductor
- CALY Technologies
- WeEn Semiconductors
- Littelfuse, Inc.
- United Silicon Carbide Inc.
Increasing demand for electric and hybrid vehicles is driving the growth of the SiC diodes market
Silicon carbide is one of the rapidly emerging compound semiconductor materials that enables power devices to operate at high switching frequencies with lower losses and temperature. As the demand for hybrid and electric vehicles is increasing rapidly, the need for energy-efficient power conversion electronics in the automotive market is becoming critical.
Power electronic devices are capable of offering effective and efficient operations at higher temperatures.
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Growing demand of SiC diodes due to their high-temperature capabilities
The wider energy band gap of silicon carbide is one of the main benefits over pure silicon or gallium arsenide. The wide band gap of silicon carbide material helps reduce the intrinsic carrier concentrations for higher-temperature operations, as well as helps reduce leakage currents.
Due to these properties, SiC diodes are being widely used for high-temperature devices, high-frequency light detection, and for high-frequency switching.
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Increasing demand for high-power semiconductors
Silicon-based high-power devices are playing an important role in enabling modern high-power systems, especially in the fields of industrial, automotive, and telecommunication. In past few years, the revolution of power electronics has swept across the power delivery and automation sectors, and has opened up a wide range of possibilities in terms of controlling the way electrical energy is transported and used.
The progress of power devices has been largely reliant on the processes and technologies developed primarily for lower power applications, following which it has been scaled and optimized to enable components to withstand higher currents and voltages to meet the requirements of higher power ratings.
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Competition Analysis of SiC Diodes Market
The global SiC diodes market represents a moderately concentrated competition landscape, wherein Tier 1 companies hold a revenue share of approximately 67%. Some of the top companies in the SiC diodes market include Infineon Technologies, STMicroelectronics, ROHM Semiconductors, and Cree, Inc.
While most of the key players maintain a strategic focus on the East Asia, North America, and Europe markets, the report underscores that technology assessment will be an important developmental strategy for companies. Leading players in the SiC diodes market are also concentrating on product innovation and acquiring other providers, and this will remain a strong differentiation strategy.
For instance, in May 2018, Microchip Technology Inc. acquired Microsemi, one of the leading providers of semiconductor solutions with elements such as power, security, reliability, and performance. This acquisition is expected to enhance Microchip’s product portfolio, end-market diversification, and operational capabilities.
Important entrants in the SiC diodes market, such as Cree, Inc., are strategizing on new product launches. For instance, in January-2019, the company launched the 5th generation 1700V (C5D) SiC diodes, which were optimized for industrial power and electric vehicle charging purposes such as wind turbine inverters and solar power.
Features of the new SiC diode are low voltage drop in the industry, higher speed, more cooling, and lower cost as compared to other bipolar silicon devices.