IGBT and Super Junction MOSFET Market

Market Study on IGBT and Super Junction MOSFET: Rising Applications in Uninterrupted Power Systems and Electric Vehicles to Trigger IGBT and Super Junction MOSFET Sales!

IGBT and Super Junction MOSFET Market by Product Type (IGBT, SJMOSFET), The IGBT segment is forecast to expand at 17.1% CAGR between 2023 and 2033.

Report ID: PMRREP33347

Number of Pages: 250

Format: PPT*, PDF, EXCEL

Industry: Semiconductor Electronics

Published Date: February-2023

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IGBT and Super Junction MOSFET Market Outlook (2023 to 2033)

The Global IGBT and Super Junction MOSFET Market size reached around US$ 4.0 billion in 2022. Overall IGBT and super junction MOSFET sales will rise at 17.2% CAGR through 2033.

Total IGBT and super junction MOSFET market valuation is set to total US$ 19.3 billion by 2033. Demand remains particularly high for IGBT due to its wider applications. The IGBT segment is forecast to expand at 17.1% CAGR between 2023 and 2033.

Increasing applications in UPS, wind turbines, and PV inverters or solar inverters is driving the market. Besides this, growing usage in electric vehicles, chargers, and lighting will boost IGBT and super junction sales.

  • Burgeoning demand for automated switching devices and modules to boost IGBT and super junction MOSFET sales
  • Shifting focus towards renewable energy resources such as wind and solar will elevate demand
  • Increasing green initiatives for curbing power losses will bode well for the market
  • Growing importance of electrical equipment and machinery will foster market development
  • Rapid transition towards electric vehicles to elevate IGBT and super junction MOSFET demand

IGBT and MOSFET are the two most popular types of transistors. These transistors are voltage-controlled devices. They have become the basic building blocks of modern electronic circuits.

Insulated Gate Bipolar Transistor (IGBT) is a 3-terminal semiconductor device mostly used for switching and amplification of signals in several electronic circuits. IGBT combines high efficiency with fast switching.

IGBTs offer mixed advantage of bipolar transistors and MOSFETs. This is attributed to their ability to provide both high-voltage drive and high input impedance.

On the other hand, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a 4-terminal semiconductor switching device used in electronic circuits for switching and amplifying signals.

Both IGBT and super junction MOSFET are widely used in consumer electronics, energy sector, and industrial technology. Super junction MOSFETs have become the industry norm in high-voltage switching converters. This is because they allow for more efficient switching at any given frequency.

Increasing demand for consumer electronics, UPSs, chargers, etc. is expected to boost the global IGBT and SJMOSFET market. This is due to rising usage of highly efficient transistors in these products.

Rising focus on higher energy efficiency will play a key role in propelling IGBT and SJMOSFET demand. Subsequently, increasing demand for electrical systems with high energy efficiencies will bode well for the market.

Rapid shift towards renewable energy sources is set to boost IGBT and super MOSFET sales through 2033. With rising energy concerns, it is estimated that demand for devices such as photovoltaic inverters or solar inverters will rise dramatically. This will create lucrative growth opportunities for IGBT and super junction MOSFET manufacturers.

Another key factor expected to fuel IGBT and super junction MOSFET sales is the development and popularity of electric and hybrid vehicles.

Electrification of vehicles is generating enormous demand for power semiconductors. As per the International Energy Agency (IEA), there were around 16.5 million electric cars on the world’s roads at the end of 2021. Hence, rising production and sales of electric cars will eventually create growth prospects for the market.

Currently, with a valuation of US$ 1.43 billion North America dominates the global IGBT and SJMOSFET market. By 2033, North America market is set to be valued at US$ 6.97 billion.

Attributes Key Insights
IGBT and Super Junction MOSFET Market Estimated Value (2023) US$ 4.0 billion
Projected Market Value (2033) US$ 19.3 billion
Value-based CAGR (2023 to 2033) 17.2%
USA Market CAGR (2023 to 2033) 15.9%
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2018 to 2022 Global IGBT and Super Junction MOSFET Sales Outlook Compared to Demand Forecast from 2023 to 2033

According to Persistence Market Research (PMR), the IGBT and super junction MOSFET sales increased at around 21.0% CAGR between 2018 to 2022. Over the next ten years, the global market is set to expand at 17.2% CAGR. By 2033, the market is forecast to create an absolute $ opportunity of US$ 15.3 billion.

Insulated gate bipolar transistors (IGBT) are used in applications such as UPS, wind turbines, consumer applications, PV inverters, and EVs/HEVs.

In Uninterrupted Power Supply (UPS), an IGBT having specifications 1200V/100A has on-resistance which is 1/10th of power MOSFET having same specifications. Its switching time is also 1/10th of GTR of similar specifications.

Thanks to these advantages, IGBTs are widely used in UPSs. Further, owing to characteristics such as high voltages and high current, IGBTs are used as switching devices for induction cookers and motor drive systems. Because of applications in such devices, IGBTs demand is expected to rise rapidly over the next ten years.

Super Junction MOSFETs are mostly used in battery charging applications. For instance, Infineon Technologies have developed CoolMOS P7 super-junction (SJ) MOSFET. It is embedded in ICC80QSG to be used in power designs that can work at 130W output.

These SJMOSFETs are used in high power electronics design. Also, they have applications in Electric Vehicles chargers. They can also be used in solar micro-inverters, lighting, and adaptors.

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Country-wise Insights:

Will the United States Continue to Dominate the Global IGBT and Junction MOSFET Market?

The United States IGBT and super junction MOSFET market is set to attain a valuation of US$ 5.4 billion by 2033. Overall IGBT and junction MOSFET sales are forecast to rise at 15.9% CAGR. This will create an absolute $ opportunity of US$ 4.2 billion by 2033.

IGBT and super junction MOSFET demand in the United States grew at 19.3% CAGR from 2018 to 2022. Rising adoption of consumer/home appliances is a key factor driving the USA market.

Increasing investments in wind energy projects and rising focus on higher energy efficiency will propel IGBT and super junction MOSFET demand.

Besides this, large presence of leading IGBT and super junction MOSFET manufacturers is helping in expanding the USA market. Various United States-based companies are developing advanced solutions to meet end user demand.

For instance, in February 2022, Vishay Intertechnology Incorporation, the United States-based semiconductor manufacturing company launched a super junction MOSFET. The new product provides high efficiency and can be used in telecom and servers. It is named SIHK045N60E.

What Makes the United Kingdom a Lucrative IGBT and Super Junction MOSFET Market?

The United Kingdom IGBT and SJMOSFET market will total US$ 1.0 billion by 2033. Sales of IGBTs and super junction MOSFETs in the country are set to surge at 16.2% CAGR.

Between 2018 and 2022, the United Kingdom market expanded at 19.6% CAGR. However, during the next ten years, the market is set to create an absolute $ opportunity of US$ 752.1 million.

Rapid penetration of electrification in automotive industry and high demand for inverters are key factors driving the United Kingdom market. Subsequently, high presence of leading companies that offer advanced solutions will boost the market.

Farnell UK, a United Kingdom-based electronics components supplier supplies IGBT modules and SJMOSFETs across the globe. Such United Kingdom-based companies are supporting the expansion of the market.

Why is IGBT and SJMOSFET Demand Rising Rapidly in Japan?

IGBT and super junction MOSFET demand in Japan is set to rise at 16.5% CAGR through 2033. PMR predicts overall Japan IGBT and super junction MOSFET market to total US$ 1.5 billion by 2033.

Japan market is likely to create an absolute $ opportunity of US$ 1.2 billion by 2033. Historically, the market in Japan expanded at 20.1% CAGR from 2018 to 2022. Rising production and sales of electric vehicles is forecast to elevate IGBT and super junction MOSFET demand in Japan.

Several Japan-based IGBT and super junction MOSFET companies are introducing novel products to meet end user demand. For instance, in March 2021, Toshiba Corporation, a leading Japan-based semiconductor manufacturer launched super junction MOSFETs named TK090U65Z, TK190U, and TK155U65Z.

The new MOSFETs are part of the product series DTMOSVI. They are expected to be used in applications such as photovoltaic power conditioners, data centers, and in numerous industrial applications.

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Category-wise Insights:

Which is the Most Sought-After Product Type in the Market?

According to Persistence Market Research, IGBT remains the highly sought-after product type. The target segment is set to rise at 17.1% CAGR during the forecast period. Between 2018 and 2022, IGBT demand grew at 20.9% CAGR.

Rising usage of IGBTs as switching devices in inverter circuits for driving small to large motors is driving growth of the target segment.

IGBTs are being used in refrigerators, air conditioners, and other devices. Rising production and sales of these devices will boost IGBT sales through 2033.

Which is the Top Application of IGBT and Super Junction MOSFET?

Adoption of IGBTs and super junction MOSFETs remains high in UPSs and wind turbines. These two segments are expected to collectively hold a prominent share of the market through 2033.

Rising adoption of UPS across industrial, commercial, and residential sectors will elevate IGBT and super junction MOSFET demand. Similarly, increasing investments in wind energy is set to boost IGBT and super junction MOSFET sales.

Leading companies are introducing application-specific products to increase their share. For instance, Fuji Electric Co Ltd, a Japan-based electrical equipment company produces IGBTs that are used in conversion circuits such as AC/DC converters.

Competitive Landscape:

Key manufacturers of IGBT and super junction MOSFET include Toshiba Corporation, Mitsubishi Electric Corporation, Semikron Elektronik GmbH & Co. KG, Fuji Electric Co STMicroelectronics N.V.,. Ltd., Vishay Intertechnology Inc., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Onsemi, and ABB Ltd.

Investments in research and development and new product launches are key strategies adopted by leading companies. Besides this, mergers, partnerships, and collaborations are quite common in this market space.

Recent Developments:

  • In February 2021, a 650 V CoolSiC Hybrid IGBT portfolio in a discrete package was launched by Infineon Technologies AG.
  • In November 2020, Fuji Electric Co Ltd, a Japan-based electrical equipment company that produces IGBTs and MOSFETs announced that it has started mass production of high power next core that is equipped with IGBT module of X series. These IGBTs are expected to be used in energy saving in railway transportation.
  • In December 2022, Infineon Technologies, a Germany-based semiconductor manufacturing company announced that it has completed the project to manufacture IGBT power transistor that works at 1700V on 300 mm silicon wafers. The project was named Power2Power and the cost of the project was US$ 80.63 million.
  • In November 2022, Infineon Technologies, a leading Germany-based semiconductor manufacturing company developed a single IGBT power module for 1500 V inverters. The name of the product is EasyPACK 4B.

Scope of the Report:

Attribute Details
Estimated Market Size (2023) US$ 4.0 billion
Projected Market Size (2033) US$ 19.3 billion
Anticipated Growth Rate (2023 to 2033) 17.2% CAGR
Forecast Period 2023 to 2033
Historical Data Available for 2018 to 2022
Market Analysis
  • US$ Million for Value
  • MT for Volume
Key Regions Covered
  • North America
  • Latin America
  • Europe
  • Asia Pacific
  • The Middle East & Africa
Key Countries Covered
  • United States
  • Canada
  • Brazil
  • Mexico
  • Germany
  • United Kingdom
  • France
  • Italy
  • Spain
  • Nordic
  • Russia
  • Poland
  • China
  • India
  • Thailand
  • Indonesia
  • Australia
  • New Zealand
  • Japan
  • GCC countries
  • North Africa
  • South Africa
  • Others
Key Segments Covered
  • Product Type
  • Application
  • Region
Key Companies Profiled
  • Infineon Technologies AG
  • Vishay Intertechnology Inc.,
  • Mitsubishi Electric Corporation
  • STMicroelectronics N.V.
  • Fuji Electric Co. Ltd.
  • Toshiba Corporation
  • Hitachi Power Semiconductor Device Ltd.
  • Onsemi
  • Semikron Elektronik GmbH & Co. KG
  • ABB Ltd
Report Coverage
  • Market Forecast
  • Company Share Analysis
  • Competition Intelligence
  • Drivers Restraints Opportunity Trends Analysis
  • Market Dynamics and Challenges
  • Strategic Growth Initiatives

Global IGBT and Super Junction MOSFET Market Segmentation:

By Product Type:

  • IGBT
    • Discrete IGBT
    • IGBT module
  • SJMOSFET
    • Discrete Super Junction MOSFET
    • Super Junction MOSFET Module

By Applications:

  • IGBT
    • UPS
    • Wind Turbines
    • PV Inverters
    • Rail Traction
    • Consumer Applications
    • EV/HEV
  • SJMOSFET
    • UPS
    • Wind Turbines
    • PV Inverters
    • Rail Traction
    • Consumer Applications
    • EV/HEV
    • Motor Drives
    • Industrial Applications
    • Converters/ Adapters /Chargers
    • Lighting
    • Others (Servers, Networking Equipment etc.)

By Region:

  • North America
  • Europe
  • Asia Pacific
  • Latin America
  • Middle East & Africa

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Companies Covered in This Report

  • Infineon Technologies AG
  • Vishay Intertechnology Inc.
  • Mitsubishi Electric Corporation
  • STMicroelectronics N.V.
  • Fuji Electric Co. Ltd.
  • Toshiba Corporation
  • Hitachi Power Semiconductor Device Ltd.
  • Onsemi
  • Semikron Elektronik GmbH & Co. KG
  • ABB Ltd.

Frequently Asked Questions

The global IGBT and Super Junction MOSFET market size is estimated to reach US$ 4.0 billion in 2023.

The global IGBT and super junction MOSFET industry is projected to total US$ 19.3 billion by 2033.

The IGBT and Super Junction MOSFET industry expanded at a CAGR of 21.0% over the last 4 years. 

Global IGBT and super junction MOSFET demand is expected to rise at a CAGR of 17.2% between 2023 and 2033. 

The IGBT is expected to garner a significant value share by 2023. 

UPS and wind turbines application segments will create lucrative opportunities for manufacturers.

The United States IGBT and super junction MOSFET market reach US$ 5.4 billion by 2033.

Infineon Technologies AG, Vishay Intertechnology Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Onsemi, Semikron Elektronik GmbH & Co. KG, and ABB Ltd. are key market IGBT and super junction MOSFET companies.

With a projected valuation of US$ 6.972 billion, North America will continue to dominate the global market.

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